| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capacitor of high capacitance and low leak current. SOLUTION: A precursor dielectric layer 11D containing organic metal compound is formed on a nickel substrate 10 of which purity of nickel is 99.99 wt.% or more, and then it is annealed to reform the precursor dielectric layer 11D into a dielectric layer 11. Thus, the amount of dispersion, from the nickel substrate 10 to the precursor dielectric layer 11D in annealing, of one or more impurities contained in the nickel substrate 10 (for example at least one of iron, titanium, copper, aluminum, magnesium, manganese, silicon, and chromium) is suppressed to a trace amount. COPYRIGHT: (C)2008,JPO&INPIT |
