发明名称 MULTILAYER ELECTRODE STRUCTURES INCLUDING CAPACITOR STRUCTURES HAVING ALUMINUM OXIDE DIFFUSION BARRIERS AND METHODS OF FORMING THE SAME
摘要 A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
申请公布号 US2007257370(A1) 申请公布日期 2007.11.08
申请号 US20070733970 申请日期 2007.04.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-CHEOL;YOON KYOUNG-RYUL;IM KI-VIN;YEO JAE-HYUN;CHUNG EUN-AE;LEE JIN-IL
分类号 H01L23/52;H01L21/44;H01L23/48;H01L29/40 主分类号 H01L23/52
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