| 摘要 |
PROBLEM TO BE SOLVED: To prevent the film thickness of a whole pixel section from being made thick, and to solve the deterioration of sensitivity or the dependency of an F value without considering the exposing status of the wiring pattern of a peripheral circuit, even when multi-layer wiring integration is carried out due to the mixture of a CCD type or CMOS type image pickup element with its peripheral circuit or the functional addition or the like. SOLUTION: A solid state image pickup element has on a semiconductor substrate 60 a pixel section 41 having photoelectric conversion elements, and a peripheral circuit section 45 for operating signal processing. Its manufacturing method includes a process for forming a flattened layer 59 on the pixel section and the peripheral circuit section, a process for forming an intermediate layer 81 in which a wiring circuit pattern is included in the peripheral circuit section 45 by a process common to both the pixel section 41 and the peripheral circuit section 45, a process for selectively removing an intermediate layer 81 for the area including the pixel section 41 by using the flattened layer 59 as a stopper, and a process for forming a protection layer 88 on the surface of the pixel section 41 and the peripheral circuit section 45 after they are selectively removed. COPYRIGHT: (C)2008,JPO&INPIT
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