| 摘要 |
PROBLEM TO BE SOLVED: To suppress by-products deposited on the upper wall surface of a passage. SOLUTION: An epitaxial growth device has a reaction chamber 12 into which a silicon wafer W is stored, and a transfer chamber 13A communicating with the reaction chamber 12 via the passage 11. In this case, a reaction gas flows from a supply port 16 provided in the reaction chamber 12 toward an exhausting port 17 provided opposite to the supply port 16. An outlet 12a at the side of the reaction chamber 12 in the passage 11 is provided at a downstream-side position of the reaction gas in the reaction chamber 12. COPYRIGHT: (C)2008,JPO&INPIT
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