| 摘要 |
<p>Disclosed is a method for commercially producing hexafluoro-1,3-butadiene, which can be used as an etching gas for semiconductor microfabrication, safely at low cost. Specifically disclosed is a method for producing hexafluoro-1,3-butadiene which is characterized by comprising a step (1) wherein a compound with 4 carbon atoms, which contains one atom selected from the group consisting of a bromine atom, an iodine atom and a chlorine atom per one carbon atom, is reacted with a fluorine gas in a gaseous phase in the presence of a dilution gas, thereby obtaining a mixture containing a product (A), and a step (2) wherein halogens other than fluorine atoms are removed from the product (A) obtained in the step (1) by using a metal in the presence of a solvent, thereby obtaining a mixture containing hexafluoro-1,3-butadiene.</p> |
