SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND MABUFACTURING METHOD THEREOF

摘要

A semiconductor memory device and a manufacturing method thereof are provided to improve the efficiency of memory cells by arranging variable resistance memory cells on every intersection between a local bit line and a local word line. Active lines are formed in a first direction on a silicon substrate to be apart from each other by a predetermined distance. Switching elements are formed to be apart from each other and contacted with upper portions of the respective active lines. Variable resistive elements are connected to the respective switching elements. Plural local bit lines(LBL0-LBL3) are formed on the variable resistive elements and connected to the respective variable resistive elements. Plural local word lines(LWL0-LWL3) are formed in the first direction to be apart from each other on the local bit lines. Plural global bit lines(GBL) are formed on the local word lines in a second direction. Plural global word lines(GWL) are formed in the first direction to be apart from each other on the global local bit lines.