| 摘要 |
PROBLEM TO BE SOLVED: To provide technology for improving manufacture yield of a semiconductor device. SOLUTION: Sidewalls 6a are formed at sides of a gate electrode 4a, and sidewalls 6b are formed at sides of a gate electrode 4b. An oxide film is deposited on a main face of a substrate 1 so that it covers the gate electrodes 4a and 4b. Anisotropic etching is used until a surface of the substrate 1 is exposed. A cap film 8c formed of the oxide film is formed in a part on the gate electrode 4b by using anisotropic etching. Sidewalls 8a formed of oxide films are formed on sides of the gate electrode 4a and sidewalls 8b formed of oxide films are formed on sides of the gate electrode 4b. COPYRIGHT: (C)2008,JPO&INPIT
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