NON-VOLATILE MEMORY DEVICE COMPRISING VARIABLE RESISTANCE MATERIAL
摘要
<p>An NVM(non-volatile memory) device is provided to supply the NVM device with a stabilized operation characteristic by forming a buffer layer between an upper electrode and a memory node. A first oxide layer(22) is formed on a lower electrode(20). A second oxide layer(24) is formed on the first oxide layer, having a variable resistance characteristic. A buffer layer(26) is formed on the second oxide layer. An upper electrode(28) is formed on the buffer layer. The second oxide layer is formed of a p-type transition metal oxide. The buffer layer is formed of a p-type oxide.</p>
