METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
摘要
<p>A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000<SUP>0</SUP> C; (2) patterning a SiO<SUB>2</SUB> mask into stripes oriented in the gallium nitride <1 l100> or <l 120> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10<SUP>4</SUP>/cm<SUP>-2</SUP>, which will find important applications in future electronic and optoelectronic devices.</p>
申请公布号
WO2007123496(A1)
申请公布日期
2007.11.01
申请号
WO2007SG00117
申请日期
2007.04.25
申请人
NATIONAL UNIVERSITY OF SINGAPORE;CHUA, SOO JIN;ZHOU, HAILONG;LIN, JIANYI;PAN, HUI