| 摘要 |
PROBLEM TO BE SOLVED: To reduce stress imposed on a memory device so as to restrain it from decreasing in retention characteristics. SOLUTION: The semiconductor device of this invention is equipped with two or more semiconductor devices (e.g., EEPROM) 10 formed inside the cell 9 of a semiconductor substrate 1, a first shading wall 15b surrounding the circumference of the cell 9, an outer frame connected to the top surface of the first shading wall 15b, and a lattice formed inside the outer frame. Furthermore, the semiconductor device is equipped with a first shading film 15a where openings 21 formed in the lattice are located above the cell 9, two or more second shading walls 16b which are formed on the first shading film 15a surrounding the circumferences of the openings 21 respectively, and two or more second shading films 16a which are connected to the top surfaces of the different second shading walls 16b and located above and around the openings 21 respectively. COPYRIGHT: (C)2008,JPO&INPIT
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