Mehrlagenschaltungssubstrat

摘要

The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050 DEG C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100 DEG C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO2-B2O3-R2O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.