发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist material having excellent resolution and focal latitude and exhibiting little variation of line width and little shape distortion even when PED (post exposure delay) lasts over a long period of time. <P>SOLUTION: A photoacid generator for the chemically amplified positive resist material generates 2,4,6-triisopropylbenzenesulfonic acid and is represented by formula (1), wherein G and G' are each S or -CH=CH- with the proviso that both G and G' are not simultaneously S; a plurality of symbols R may be the same or different and are each H, F, Cl or a 1 to 4C linear, branched or cyclic substituted or unsubstituted alkyl or alkoxy; and k is an integer of 0 to 4. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP4000473(B2) 申请公布日期 2007.10.31
申请号 JP20030205698 申请日期 2003.08.04
申请人 发明人
分类号 G03F7/004;C08F212/14;C08F220/10;C08F232/08;C09K3/00;G03F7/039;H01L21/027 主分类号 G03F7/004
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