SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce or prevent disturbance failure in a semiconductor device having a non-volatile memory. SOLUTION: A memory cell MC in the non-volatile memory has a memory gate electrode MG formed on the main surface of a semiconductor substrate 1S via an insulating film 2 for accumulating charge. A sidewall 4A is formed on the side of the memory gate electrode MG. Further, a sidewall 12A is formed on the side of the sidewall 4A. A silicide layer 7s where an edge at the side of a memory gate electrode MG is prescribed with the sidewall 12A is formed on the upper surface of an n+-type semiconductor region 5Sp for the source of the memory cell MC. COPYRIGHT: (C)2008,JPO&INPIT