INTEGRATED CIRCUIT USING FINFETS AND HAVING A STATIC RANDOM ACCESS MEMORY (SRAM)

摘要

An integrated circuit (10) includes a logic circuit and a memory cell (21). The logic circuit includes a P-channel transistor (18), and the memory cell includes a P-channel transistor. The P-channel transistor of the logic circuit includes a channel region. The channel region has a portion located along a sidewall of a semiconductor structure having a surface orientation of (110). The portion of the channel region located along the sidewall has a first vertical dimension that is greater than a vertical dimension of any portion of the channel region of the P-channel transistor of the memory cell located along a sidewall of a semiconductor structure having a surface orientation of (110).