| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a high purity silicon single crystal using a natural quartz crucible. SOLUTION: A quartz crucible 13 not filled with a silicon raw material is provided in a chamber 11, and the quartz crucible 13 is subjected to a heat treatment wherein the quartz crucible 13 is kept at a temperature of 1,000-1,500°C for 2-10 h by a heater 14 while flowing the mixed gas of an inert gas and 3-20 vol% hydrogen in the chamber 11. Thereby, impurities becoming nuclei of cristobalite are removed from the inner surface of the quartz crucible 13 and at the same time, impurities sticking on the surfaces of carbon members in the chamber 11 are removed by the reducing action of hydrogen, and the carbon members is highly purified. The quartz crucible 13 subjected to heat treatment is taken out to a clean room outside the chamber 11, and after filling the crucible with the silicon raw material, the crucible is again installed in the chamber 11. COPYRIGHT: (C)2008,JPO&INPIT
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