| 摘要 |
Provided are a semiconductor memory device and a driving method thereof, which can reduce power consumption and operation delay time by preventing an overlapped driving of word lines. The pseudo SRAM includes: an address input unit for receiving an address through a pin and outputting the received address as an internal address; a transition detecting unit for detecting a transition of the internal address; a word line (WL) driving signal generating unit for generating a WL driving signal in response to an output signal of the transition detecting unit; and a control signal generating unit, in response to a pin select signal, for generating a first control signal for controlling the address input unit to output only an valid address as the internal address, and a second control signal for controlling the WL driving signal generating unit to activate the WL driving signal.
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