| 摘要 |
An IPM(Integrated Process Modulation) and a novel solution for gap-fill with HDP-CVD are provided to improve a gap-fill performance of a silicon oxide film by using a process with a simultaneous deposition and a sputtering component through an HDP-CVD deposition. A method for filling a pre-metal deposition trench formed on a substrate includes the steps of: performing a cycle depositing a layer on the substrate in a high density CVD chamber, the substrate cooled below 400 degrees centigrade, and etching a portion of the deposited layer one the substrate in the chamber(410); repeating the cycle of depositing the layer and etching the portion of the layer for a predetermined number of cycles(445); and flowing a backside cooling gas to cool a platform thermally coupled to the substrate. The step of repeating the cycle of depositing the layer and etching the portion of the layer includes the step of setting substantially the same process conditions as used in at least one initial cycle. The step of depositing the layer includes generating the plasma having deposition gas and sputtering gas.
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