发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve reliability and a yield of a semiconductor device by a method of manufacturing the semiconductor device with a support without making the manufacturing process complex. SOLUTION: Before a process for pasting the support 8 onto a semiconductor substrate 1, a part of the surface of the semiconductor substrate 1 is removed, and a groove part 5 is formed along a position corresponding to a dicing line DL. After carrying out a series of workings, a protective layer 20, a second insulation film 11 and the semiconductor substrate 1 are removed in this order by a dicing blade and dry etching to form an opening 22 (dissolving agent supply channel). The opening 22 is, at the bottom part thereof, communicated with the groove part 5, and a part of an adhesive layer 7 is exposed in the opening part 22. At this point, a large number of semiconductor devices are divided into individual semiconductor chips. Then, the dissolving agent (for example, alcohol or acetone) is supplied to the exposed adhesive layer 7 through the opening part 22 to gradually reduce its adhesive strength and thereby the support 8 is removed by peeling from the semiconductor substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007273941(A) 申请公布日期 2007.10.18
申请号 JP20060259288 申请日期 2006.09.25
申请人 SANYO SEMICONDUCTOR CO LTD;SANYO ELECTRIC CO LTD;SANYO HANDOTAI SEIZO KK 发明人 KAMEYAMA KOJIRO;OIKAWA TAKAHIRO;SUZUKI AKIRA
分类号 H01L21/301;H01L21/3205;H01L23/52 主分类号 H01L21/301
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