| 摘要 |
PROBLEM TO BE SOLVED: To reduce a circuit area of a semiconductor device with a plurality of memory macros achieving redundancy relief. SOLUTION: One fuse macro FUSE-A is provided for the plurality of memory macros RAM01-RAM07 which have a redundant relief function by comprising a plurality of normal memory cell groups and a redundant memory cell group. Redundancy information for relieving a defective memory cell group in the memory macros RAM01-RAM07 is held by the fuse macro FUSE-A. Therefore, the number of fuses to be required in the semiconductor device is reduced, and the circuit area of the semiconductor device can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
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