SILICON SUBSTRATE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon substrate which suppresses a deflection of a semiconductor of a nitride compound epitaxially grown to form a semiconductor element of nitride compound. SOLUTION: In the silicon substrate 1, a convex deflection, which has an amount of deflection reducing its deflection after a semiconductor layer 2 is grown, is provided in advance on a main surface 1a on which a stress is applied in the concavely deflecting direction caused from the growth of the substrate layer 2 of nitride compound. COPYRIGHT: (C)2008,JPO&INPIT