SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A method of manufacturing a device on a silicon carbide substrate is disclosed. The device includes an oxide layer which has silicon oxide as a main component on the silicon carbide semiconductor substrate. The method includes depositing and oxide layer on a surface of the silicon carbide semiconductor substrate; raising a temperature of the oxide layer in a non-oxidizing atmosphere to a temperature bringing the oxide layer into a liquefied state; and then rapidly cooling the oxide layer down to a temperature equal to or less than 1140° C. to form the oxide layer including silicon oxide as a main component. The silicon carbide semiconductor device has improved channel mobility to lower on-resistance by decreasing an interface state density at an interface between the oxide insulator film that has silicon oxide as its main component and the silicon carbide semiconductor substrate.