| 摘要 |
The present invention provides a thin-film transistor array, of which the units provide with a storage capacitor disposed in the thin-film transistor array and a protective layer of transparent conductive material covering the source/drain metal of the thin-film transistor array. The present invention also provides a method for manufacturing the thin-film transistor array, the method comprising three photomask processes, wherein the gate metal over the pixel electrode defined along with the gate is removed due to etch selectivity ratio; the active region of the thin-film transistor is defined by gray-tone mask; and the passivation film is defined through back-side exposure that is masked by the pattern of the gate metal region. |
