| 摘要 |
<p>A hydrogen-occluding conductive material having the property of absorbing hydrogen is used in combination with hydrogen diffusion preventive films (23, 27, 28) in order to prevent, without fail, hydrogen generated from coming into a ferroelectric film (25). The hydrogen-occluding conductive material or a conductive material containing it, palladium (Pd) in this case, is deposited on an interlayer dielectric (33) so as to fill via-holes (34a, 35a) through glue films (34b, 35b). CMP is then conducted to form plugs (34, 35). This relatively simple constitution prevents the penetration of water/hydrogen into inner parts without fail and enables a ferroelectric capacitor structure (30) to retain high performance. This can be realized without the need of increasing the number of constituent members and the number of steps.</p> |
