| 摘要 |
A semiconductor memory device for assuring bank area is provided reduce a layout area by a row and column region in the semiconductor memory device, by transferring a decoding signal to each block of the row region using a signal line formed on the equal layer to a third metal line used for reinforcing a power supply voltage supplied through a first metal line. A semiconductor memory device is divided into a peri region where a number of pads including an address pad are formed, a row region(XHOLE) enabling a word line using an address provided from the address pads, and a core region where a number of banks are arranged. A row address decoder(200) decoding the address provided from the address pads is arranged on the peri region. The decoded signal is provided to the row region through an interconnection line arranged to go through each bank via the peri region from the row address decoder.
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