发明名称 Method of implanting a substrate and an ion implanter for performing the method
摘要 An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
申请公布号 US7282427(B1) 申请公布日期 2007.10.16
申请号 US20060417028 申请日期 2006.05.04
申请人 APPLIED MATERIALS, INC. 发明人 MURRELL ADRIAN;HARRISON BERNARD;EDWARDS PETER IVOR TUDOR;KINDERSLEY PETER;LOWRIE CRAIG;BANKS PETER MICHAEL;SAKASE TAKAO;FARLEY MARVIN;SATOH SHU;RYDING GEOFFREY
分类号 H01L21/26;H01L21/04 主分类号 H01L21/26
代理机构 代理人
主权项
地址