发明名称 |
Semiconductor laser device and manufacturing method thereof |
摘要 |
In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element 110 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate 101 . Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements 110 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.
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申请公布号 |
US2007237199(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20060390426 |
申请日期 |
2006.03.28 |
申请人 |
KASHIMA TAKAYUKI;MAKITA KOUJI;YOSHIKAWA KENJI |
发明人 |
KASHIMA TAKAYUKI;MAKITA KOUJI;YOSHIKAWA KENJI |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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