| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a single crystal silicon carbide substrate which is a self-standing substrate comprising only silicon carbide, has few defects, and is excellent in crystallinity. SOLUTION: An SOI substrate 1 constituted of a silicon substrate 2, an embedded insulating film 3, and a surface silicon film 4 is prepared as a material when manufacturing is started. The surface silicon film 4 is converted into a single crystal silicon carbide film 5 by a carbonization treatment, and a single crystal silicon carbide film 6 is formed on the single crystal silicon carbide film 5 by an epitaxial growth method. Thereafter, the silicon substrate 2 and the embedded insulating film 3 are removed, and the stacked structure of the single crystal silicon carbide films 5, 6 are used as the single crystal silicon carbide substrate. COPYRIGHT: (C)2008,JPO&INPIT
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