Reflection type photomask blank, reflection type photomask, and method of manufacturing semiconductor device using the same

摘要

In a reflection type photomask blank having a multilayer reflection film and a light absorption laminated layer laminated on a substrate, the light absorption laminated layer is composed by laminating a second light absorption layer having DUV light absorbing capacity and containing at least one of nitrogen and oxygen, and tantalum and silicon, on a first light absorption layer having EUV light absorbing capacity and containing tantalum and silicon.