| 摘要 |
<p>A memory having storage locations within common volume of a phase change material is provided to increase storage density and to reduce cost of the memory by decreasing the physical size of the memory cell. A memory includes a volume of a phase change material, a first transistor and a second transistor. The first transistor is coupled to the volume of the phase change material in order to be close to a first storing location in the volume of the phase change material. The second transistor is coupled to the volume of the phase change material in order to be close to a second storing location in the volume of the phase change material. The first transistor is located on a first layer, and the second transistor is located on a second layer vertically adjacent to the first layer.</p> |
