| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device having low operation resistance and switching loss and excellent switching characteristics. SOLUTION: An oxygen-rich layer (4) having an oxygen concentration higher than the other depth regions (16 and 17) of a semiconductor substrate (1) is formed to the specified depth region (15) of the semiconductor substrate (1), and the semiconductor substrate (1) is irradiated with a radiation and a recombination region (5) is formed to the oxygen-rich layer (4). When the oxygen-rich layer (4) is formed, the semiconductor substrate (1) is irradiated with the radiation and atomic vacancies are formed among the crystal lattices of the semiconductor substrate (1), the recombination region (5) is formed to the oxygen-rich layer (4) by composite faults formed by bonding oxygen and the atomic vacancies. The recombination region (5) functions as a carrier capture region controlling the lifetime of carriers in the specified depth region (15) of the semiconductor substrate (1). COPYRIGHT: (C)2008,JPO&INPIT
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