发明名称 |
SEMICONDUCTOR DEVICE, LAMINATED SEMICONDUCTOR DEVICE USING THE SAME, BASE SUBSTRATE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in connection yield and connection reliability between the semiconductor device and a mounting substrate and between the semiconductor devices, even if warpage of the semiconductor device occurs when achieving a thickness-reduction and high density of a semiconductor, a laminated semiconductor device using the same, a base substrate, and a semiconductor device manufacturing method. <P>SOLUTION: The semiconductor device 10 is composed so that a plurality of external-connection lands 1 for external-connection terminals 2 to electrically connect with external members are arrayed on the base substrate 3. Each external-connection land 1 has a different height corresponding to its arrayed place in accordance with the warpage of the base substrate 3 during mounting. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007266111(A) |
申请公布日期 |
2007.10.11 |
申请号 |
JP20060086205 |
申请日期 |
2006.03.27 |
申请人 |
SHARP CORP |
发明人 |
MURATA KATSUMASA;YANO YUJI;SODA YOSHIKI |
分类号 |
H01L23/12;H01L21/60;H01L25/10;H01L25/11;H01L25/18 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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