| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having improved heat radiation properties, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device 10A comprises: a semiconductor substrate 11; a sidewall 21 for covering the side of the semiconductor substrate 11; a cooling region 27 prescribed to the upper surface of the semiconductor substrate 11; and wiring 14, or the like formed on the lower surface of the semiconductor substrate 11. In the semiconductor device 10A, the cooling region 27 is provided on the upper surface of the semiconductor substrate 11, thus cooling the semiconductor substrate 11 by a refrigerant. Concretely, the recessed cooling region 27 is provided on the upper surface of the semiconductor substrate 11, thus improving cooling efficiency using a refrigerant. COPYRIGHT: (C)2008,JPO&INPIT |
