METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a capacitor of semiconductor device is provided to effectively remove impurities when forming a conductive film for an upper electrode with a high RF power by performing nitrogen and hydrogen plasma treatments. A method for fabricating a capacitor of semiconductor device includes the steps of: forming a conductive film for a lower electrode on a semiconductor substrate(S10); forming a dielectric layer made with a high-k material on the conductive film for the lower electrode(S20); forming a first metal nitride film(S30); performing a nitrogen and hydrogen plasma treatment at a first RF power(S40); forming a second metal nitride film(S50); performing nitrogen and hydrogen plasma treatment at least twice for removing impurities(S60) at a second RF power which is higher than the first RF power; and forming a buffer layer for protecting the conductive film for an upper electrode(S70).