发明名称 |
Method and apparatus for circuit pattern inspection |
摘要 |
<p>The present invention provides a circuit pattern edge inspection method using a scanned electron beam of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method.
</p> |
申请公布号 |
EP1279923(A3) |
申请公布日期 |
2007.10.10 |
申请号 |
EP20020002568 |
申请日期 |
2002.02.04 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMAGUCHI, ATSUKO;TERASAWA, TSUNEO;OTAKA, TADASHI;IIZUMI, TAKASHI;KOMURO, OSAMU |
分类号 |
G01B15/00;G01B15/04;G01N21/956;G01N23/225;G03F7/20;G06T7/00;H01L21/66 |
主分类号 |
G01B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|