发明名称 Method and apparatus for circuit pattern inspection
摘要 <p>The present invention provides a circuit pattern edge inspection method using a scanned electron beam of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method. </p>
申请公布号 EP1279923(A3) 申请公布日期 2007.10.10
申请号 EP20020002568 申请日期 2002.02.04
申请人 HITACHI, LTD. 发明人 YAMAGUCHI, ATSUKO;TERASAWA, TSUNEO;OTAKA, TADASHI;IIZUMI, TAKASHI;KOMURO, OSAMU
分类号 G01B15/00;G01B15/04;G01N21/956;G01N23/225;G03F7/20;G06T7/00;H01L21/66 主分类号 G01B15/00
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