| 摘要 |
A semiconductor device is provided to improve an operation reliability of the semiconductor device by forming the semiconductor device on a device forming region rather than a device formation blocking region. A semiconductor layer(10) includes a device forming region and a device isolation region around the device forming region. A device is formed in the device forming region. An interlayer dielectric(60) is formed on the semiconductor substrate. An electrode pad(62) is formed on the interlayer dielectric. A passivation layer(70) is arranged on the electrode pad and includes an aperture, which partially exposes at least a portion of the electrode pad. A bump is arranged in the aperture and has a long side and a short side. At least a portion of the bump is overlapped with the device from a planar point of view. A device formation blocking region(12) is formed on the semiconductor layer across an inside to an outside below the short side of the bump. |
