发明名称 |
High-temperature stable gate structure with metallic electrode |
摘要 |
The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the layer of metal atoms has a thickness of less than about 15 Å; forming an oxygen diffusion barrier atop the layer of metal atoms, wherein the non-oxidizing atmosphere is maintained; forming a gate conductor atop the oxygen diffusion barrier; and annealing the layer of metal atoms and the dielectric layer, wherein the layer of metal atoms reacts with the dielectric layer to provide a continuous metal oxide layer having a dielectric constant ranging from about 25 to about 30 and a thickness less than about 15 Å.
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申请公布号 |
US7279413(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20040869658 |
申请日期 |
2004.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PARK DAE-GYU;GLUSCHENKOV OLEG G.;GRIBELYUK MICHAEL A.;WONG KWONG HON |
分类号 |
H01L21/4763;H01L21/28;H01L21/336;H01L21/44;H01L29/49;H01L29/51 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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