发明名称 |
Flash memory device and method of repairing defects and trimming voltages |
摘要 |
A memory device includes a nonvolatile memory cell array including a plurality of memory cells with a portion of the memory cells to store fuse data, and a fuse register to store the fuse data from the memory cell array. An operation of the memory device is modified in response to the fuse register.
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申请公布号 |
US7280415(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20060380749 |
申请日期 |
2006.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SANG-WON;YOUN DONG-KYU |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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