| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a hardmask composition for a resist underlayer film that has high etching selectivity, sufficient resistance to multiple etchings, and an antireflective property to minimize the reflectivity between the resist and a lower layer, and a method of patterning a backside material layer on a substrate using the hardmask composition. <P>SOLUTION: The hardmask composition for a resist underlayer film is provided from one kind or more of compounds represented by a formula (1): [R<SB>1</SB>O]<SB>3</SB>Si-R<SB>2</SB>(wherein R<SB>1</SB>represents an alkyl group with a carbon number of 1 to 5, an acetoxy group, or an oxime group, while R<SB>2</SB>represents hydrogen, the alkyl group with a carbon number of 1 to 5, an aryl group, or an aralkyl group), and contains an organosilane polymer with a value of molecular weight distribution (Mw/Mn) of 1.1 to 2, and a solvent. <P>COPYRIGHT: (C)2008,JPO&INPIT |
