| 摘要 |
A semiconductor device including a semiconductor substrate, a tunnel insulation film provided on the surface of the semiconductor substrate, charge trap states at which an electron potential energy is higher than a Fermi level of the semiconductor substrate being provided at part of the tunnel insulation film at least in the vicinity of an interface with the semiconductor substrate, and at least one charge storage layer being provided on the tunnel insulation film, charges supplied from the semiconductor substrate via the tunnel insulation film being accumulated in the charge storage layer.
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