GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MAUFACTURING SAME, AND LAMP USING IT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride compound semiconductor light emitting element, the gallium nitride compound semiconductor light emitting element, and a lamp using the same which prevents the increase of the resistivity of a p-type semiconductor layer by hydrogen annealing and reduces the resistivity of a light-permeable conductive oxide film to lower its drive voltage (Vf).

SOLUTION: The method of manufacturing a gallium nitride compound semiconductor light emitting element laminates a positive electrode 15 of a light-permeable conductive oxide film on a p-type GaN layer 14 of the light emitting element. The method comprises a hydrogen annealing step for annealing the positive electrode 15 in a gas atmosphere containing hydrogen (H2).

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