| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of erasing speed and the variation in threshold value while enhancing depletion. SOLUTION: This semiconductor memory comprises a substrate 1, a source region 2 of a starting point for an electrically conductive path, a drain region 3 which is an endpoint therefor, a first insulating film 4 on the region wherein the conductive path is formed, a floating gate 5 formed on the first insulating film 4 and having an impurity whose concentration not more than a predetermined value and hydrogen atoms whose concentration not less than a predetermined value implanted therein, a second insulating film 6 covering the floating gate 5, a control gate 8 formed separately from the floating gate 5 via the second insulating film 6, and a protective film. COPYRIGHT: (C)2008,JPO&INPIT
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