| 摘要 |
A semiconductor storage device comprises a memory cell array having memory cells arranged in a matrix, each memory cell mainly composed of a flip-flop formed of a pair of cross-coupled inverters, a first wiring configured to each row and each column of the memory cell array and connected to a predetermined power supply node, a second wiring configured in parallel to the first wiring, and a switching circuit that is connected between the power supply node and the second wiring and opens when initial data is set to the memory cells, wherein a receiving node of each pair of inverters is selectively connected to the first wiring or the second wiring in accordance with a logical value of initial data to be set to each one of the plurality of the memory cells belonging to each row and each column of the memory cell array.
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