发明名称 Semiconductor Storage Device
摘要 A semiconductor storage device according to the present invention comprises one or more memory planes 8 comprising a plurality of memory blocks 9 , and a block selection circuit for decoding an block address signal for selecting the memory block 9 from the memory plane 8 to select the memory block, generates a dummy block address for selecting a dummy block that is different from the selected block address and a defective block address of a defective block by a predetermined logical operation targeted for a specific partial bit in address bits of the selected block address when the defective block is contained in the memory plane. A bit line connected to the selected memory cell selected by the selected block address and a bit line in the dummy block are connected to differential input terminals of a sense amplifier circuit 9.
申请公布号 US2007230245(A1) 申请公布日期 2007.10.04
申请号 US20050589066 申请日期 2005.02.09
申请人 WATANABE MASAHIKO;MORI YASUMICHI 发明人 WATANABE MASAHIKO;MORI YASUMICHI
分类号 G11C29/04;G11C8/12;G11C16/08;G11C16/28;G11C29/00 主分类号 G11C29/04
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