METHOD OF MANUFACTURIG THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for fabricating a TFT substrate is provided to prevent a gate metal layer and a transparent conductive layer from being corroded by etchant in mutually different layers by respectively etching the gate metal layer and the transparent conductive layer while using etchant not influencing the gate metal layer and the transparent conductive layer. A gate line having a stack of a transparent conductive layer(11,12) and a metal layer, and a common line and a common electrode which are composed of a gate electrode(15) and a transparent conductive layer, are formed on a substrate by using a mask. The abovementioned process includes the following steps. A transparent conductive layer and a metal layer are stacked on a substrate. A photoresist pattern is formed on the metal layer by using the mask. By using the photoresist pattern as a mask, the metal layer is etched by first etchant. By using the photoresist pattern as a mask, the transparent conductive layer is etched by second etchant. A part of the photoresist pattern is removed to expose a part of the metal layer. The exposed metal layer is etched by the first etchant. Indium tin oxide can be used as the transparent conductive layer.