| 摘要 |
A plasma processing apparatus and a method and a computer readable storage medium are provided to make a thickness of an oxide film uniform by setting a gap between a wafer and a top plate to 100mm or less. A process container(1) accommodates an object to be processed(W) and maintains vacuum for performing a plasma process. A worktable(2) is positioned in the process container to support the object. A planar antenna(31) is provided with plural slots to supply microwaves into the process container. A gas feed mechanism(15) introduces a process gas into the process container. A top plate(28) is disposed opposite the worktable. The top plate is positioned in such a way that an interval between the object and the top plate is within the range of 20mm to 100mm.
|
