| 摘要 |
A method for reducing a metal, a multilayer interconnection structure and a manufacturing method of the same, and a semiconductor device and a manufacturing method for the same are provided to enhance reliability by reducing an interconnection resistance and a parasitic resistance between interconnections. A method for reducing a metal includes a process for hydrolyzing vapor including at least a carboxylic acid ester compound by using water vapor in order to reduce an oxidized metal. The carboxylic acid ester compound is a compound expressed by one of the following chemical expressions 1 and 2, HCOOR1 chemical expression 1, and CnHmCOOR2 chemical expression 2 where each of R1 and R2 represents a hydrocarbon of 1 to 3 carbon atoms, n represents an integer of 1 to 3, and m represents an integer of 3 to 7. The method is executed under a heating condition of 50 to 400 degrees centigrade.
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