发明名称 |
SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE |
摘要 |
<p>Semiconductor device (1; 38, 48) formed by a first conductive strip (10) of semiconductor material; a control gate region (7; 35; 55) of semiconductor material, facing a channel portion (5c) of the first conductive strip,- and an insulation region (6; 32; 52) arranged between the first conductive strip and the control gate region. The first conductive strip (10) includes a conduction line (5) having a first conductivity type and a control line (4) having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line (5) forms the channel portion (5c) , a first conduction portion (5a) and a second conduction portion (5b) arranged on opposite sides of the channel portion.</p> |
申请公布号 |
WO2007108017(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
WO2006IT00170 |
申请日期 |
2006.03.20 |
申请人 |
STMICROELECTRONICS S.R.L.;ROLANDI, PAOLO;CALLIGARO, CRISTIANO;PASCUCCI, LUIGI |
发明人 |
ROLANDI, PAOLO;CALLIGARO, CRISTIANO;PASCUCCI, LUIGI |
分类号 |
H01L29/78;H01L21/822;H01L27/06;H01L27/115;H01L27/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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