METHOD FOR FABRICATING COMPOSITE MATERIAL WAFERS AND METHOD FOR RECYCLING USED DONOR SUBSTRATES

摘要

PROBLEM TO BE SOLVED: To provide a method for recycling a resulting donor substrate in silicon-on-insulator wafer fabrication involving layer transfer from a donor substrate to a handle substrate.

SOLUTION: This method produces a split area 7 and an insulator layer 5 on an initial donor substrate 1 and then peels off the donor substrate 1 after completion of layer transfer onto a handle substrate 9 to form a composite material wafer 11. To partially reduce at least an oxygen precipitate and/or an atomic nucleus in the donor substrate 1 and/or the remainder 13 of the donor substrate 1, quick thermal oxidation is performed in a temperature range from 1,200°C to 1,250°C.

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