| 摘要 |
PROBLEM TO BE SOLVED: To provide a desired low leak current characteristics and high breakdown strength characteristics by allowing adhesion between an electrode or metal wiring and a wanted insulating film. SOLUTION: An HEMT100 comprises a source electrode 6, a gate electrode 7, a drain electrode 8, and insulating films 9 and 10 at the upper part of an electron supply layer 5 of a compound semiconductor layer formed at the upper part of a substrate 1. Nitride-based junction films 11a, 11d, and 11c are formed at each junction interface of the insulating film 10 and the source electrode 6, gate electrode 7, and drain electrode 8. A nitride-based junction film 11b is formed on the junction interface between the gate electrode 7 and the insulating film 9. The junction films 11a, 11d, and 11c join the source electrode 6, gate electrode 7, and drain electrode 8 to the insulating film 10. The junction film 11b joins the gate electrode 7 to the insulating film 9. COPYRIGHT: (C)2007,JPO&INPIT |
