| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that defects may be formed and defects may even be formed in source electrode contact formation when the ions of a high concentration are implanted to a semiconductor in order to form the source/drain electrode of a transistor for signal output of a solid-state imaging device. SOLUTION: A transistor for amplification output is an n channel MOSFET for which a p-type region 47 near a source right under an annular gate electrode 45 is a gate region, and an n<SP>+</SP>-type source region 46 and an n<SP>+</SP>-type drain region 48 are provided. In the transistor for the amplification output, charges photoelectrically converted by a photodiode by a p-type region 49 embedded inside an n well 43 are transferred through the n well 43 right under a transfer gate electrode 51 to the p-type region 47 near the source and stored, and the charges are converted to optical signals and are amplified and outputted. The source region 46 is directly connected by a polysilicon contact 59 and is prepared by such a method that crystal defects to the source region 46 are not caused. COPYRIGHT: (C)2007,JPO&INPIT
|
